Submicron model for illuminated gallium nitride HEMT

Abstract

Microwave power transistors play key role in today's wireless communication, necessary for virtually all major aspects of human activities from entertainment, business to military. HEMT is widely used due to its high speed and power amplification capabilities. The paper deals with comparison of Shockley's Model and the New Model of HEMT to evaluate its sensitivity to illumination to find its application in optical monolithic microwave integrated circuits(OMMIC).

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